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Dual Redox-active Covalent Organic Framework-based Memristors for Highly-efficient Neuromorphic Computing.
Zhang, Qiongshan; Che, Qiang; Wu, Dongchuang; Zhao, Yunjia; Chen, Yu; Xuan, Fuzhen; Zhang, Bin.
Affiliation
  • Zhang Q; East China University of Science and Technology, School of Chemistry and Molecular Engineering, CHINA.
  • Che Q; East China University of Science and Technology, School of Chemistry and Molecular Engineering, CHINA.
  • Wu D; East China University of Science and Technology, School of Chemistry and Molecular Engineering, CHINA.
  • Zhao Y; East China University of Science and Technology, School of Chemistry and Molecular Engineering, CHINA.
  • Chen Y; East China University of Science and Technology, School of Chemistry and Molecular Engineering, CHINA.
  • Xuan F; East China University of Science and Technology, Shanghai Key Laboratory of Intelligent Sensing and Detection, CHINA.
  • Zhang B; East China University of Science and Technology, 130 meilong road, Shanghai, CHINA.
Angew Chem Int Ed Engl ; : e202413311, 2024 Aug 06.
Article in En | MEDLINE | ID: mdl-39104289
ABSTRACT
Organic memristors based on covalent organic frameworks (COFs) exhibit significant potential for future neuromorphic computing applications. The preparation of high-quality COF nanosheets through appropriate structural design and building block selection is critical for the enhancement of memristor performance. In this study, a novel room-temperature single-phase method was used to synthesize Ta-Cu3 COF, which contains two redox-active units trinuclear copper and triphenylamine. The resultant COF nanosheets were dispersed through acid-assisted exfoliation and subsequently spin-coated to fabricate a high-quality COF film on an indium tin oxide (ITO) substrate. The synergistic effect of the dual redox-active centers in the COF film, combined with its distinct crystallinity, significantly reduces the redox energy barrier, enabling the efficient modulation of 128 non-volatile conductive states in the Al/Ta-Cu3 COF/ITO memristor. Utilizing a convolutional neural network (CNN) based on these 128 conductance states, image recognition for ten representative campus landmarks was successfully executed, achieving a high recognition accuracy of 95.13% after 25 training epochs. Compared to devices based on binary conductance states, the memristor with 128 conductance states exhibits a 45.56% improvement in recognition accuracy and significantly enhances the efficiency of neuromorphic computing.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Angew Chem Int Ed Engl Year: 2024 Document type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Angew Chem Int Ed Engl Year: 2024 Document type: Article