An Antiferromagnetic Neuromorphic Memory Based on Perpendicularly Magnetized CoO.
Nano Lett
; 24(36): 11187-11193, 2024 Sep 11.
Article
in En
| MEDLINE
| ID: mdl-39141575
ABSTRACT
Antiferromagnets (AFMs) are ideal materials to boost neuromorphic computing toward the ultrahigh speed and ultracompact integration regime. However, developing a suitable AFM neuromorphic memory remains an aspirational but challenging goal. In this work, we construct such a memory based on the CoO/Pt heterostructure, in which the collinear insulating AFM CoO shows a strong perpendicular anisotropy facilitating its electrical readout and writing. Utilizing the unique nonlinear response and bipolar fading memory properties of the device, we demonstrate a multidimensional reservoir computing beyond the traditional binary paradigm. These results are expected to pave the way toward next-generation fast and massive neuromorphic computing.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nano Lett
Year:
2024
Document type:
Article