Structural and optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition.
J Nanosci Nanotechnol
; 1(2): 159-68, 2001 Jun.
Article
em En
| MEDLINE
| ID: mdl-12914047
ABSTRACT
Silicon nanocrystals (Si-nc) embedded in SiO2 matrix have been prepared by high temperature thermal annealing (1000-1250 degrees C) of substoichiometric SiOx films deposited by plasma-enhanced chemical vapor deposition (PECVD). Different techniques have been used to examine the optical and structural properties of Si-nc. Transmission electron microscopy analysis shows the formation of nanocrystals whose sizes are dependent on annealing conditions and deposition parameters. The spectral positions of room temperature photoluminescence are systematically blue shifted with reduction in the size of Si-nc obtained by decreasing the annealing temperature or the Si content during the PECVD deposition. A similar trend has been found in optical absorption measurements. X-ray absorption fine structure measurements indicate the presence of an intermediate region between the Si-nc and the SiO2 matrix that participates in the light emission process. Theoretical observations reported here support these findings. All these efforts allow us to study the link between dimensionality, optical properties, and the local environment of Si-nc and the surrounding SiO2 matrix.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Silício
/
Modelos Moleculares
/
Dióxido de Silício
/
Cristalização
/
Nanotecnologia
Tipo de estudo:
Evaluation_studies
/
Prognostic_studies
Idioma:
En
Revista:
J Nanosci Nanotechnol
Ano de publicação:
2001
Tipo de documento:
Article