Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001).
Phys Rev Lett
; 93(21): 216102, 2004 Nov 19.
Article
em En
| MEDLINE
| ID: mdl-15601034
ABSTRACT
By high resolution scanning tunneling microscopy, we investigate the morphological transition from pyramid to dome islands during the growth of Ge on Si(001). We show that pyramids grow from top to bottom and that, from a critical size on, incomplete facets are formed. We demonstrate that the bunching of the steps delimiting these facets evolves into the steeper dome facets. Based on first principles and Tersoff-potential calculations, we develop a microscopic model for the onset of the morphological transition, able to reproduce closely the experimentally observed behavior.
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01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2004
Tipo de documento:
Article