Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells.
Phys Rev Lett
; 94(12): 126802, 2005 Apr 01.
Article
em En
| MEDLINE
| ID: mdl-15903946
ABSTRACT
Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 mus for an ensemble of free two-dimensional electrons confined in a Si/SiGe quantum well. The decoherence can be understood in terms of momentum scattering causing fluctuating effective Rashba fields. Further confining the electrons into a nondegenerate (other than spin) ground state of a quantum dot can be expected to eliminate this decoherence mechanism.
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MEDLINE
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En
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Phys Rev Lett
Ano de publicação:
2005
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Article