Direct low-temperature nanographene CVD synthesis over a dielectric insulator.
ACS Nano
; 4(7): 4206-10, 2010 Jul 27.
Article
em En
| MEDLINE
| ID: mdl-20586480
ABSTRACT
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Temperatura
/
Carbono
/
Nanotecnologia
/
Nanoestruturas
Idioma:
En
Revista:
ACS Nano
Ano de publicação:
2010
Tipo de documento:
Article