Micrometer-scale ballistic transport in encapsulated graphene at room temperature.
Nano Lett
; 11(6): 2396-9, 2011 Jun 08.
Article
em En
| MEDLINE
| ID: mdl-21574627
ABSTRACT
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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01-internacional
Base de dados:
MEDLINE
Assunto principal:
Temperatura
/
Compostos de Boro
/
Grafite
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2011
Tipo de documento:
Article