Nonequilibrium conductance of a nanodevice for small bias voltage.
J Phys Condens Matter
; 24(1): 015306, 2012 Jan 11.
Article
em En
| MEDLINE
| ID: mdl-22156237
ABSTRACT
Using nonequilibrium renormalized perturbation theory, we calculate the retarded and lesser self-energies, the spectral density ρ(ω) near the Fermi energy, and the conductance G through a quantum dot as a function of a small bias voltage V, in the general case of electron-hole asymmetry and intermediate valence. The linear terms in ω and V are given exactly in terms of thermodynamic quantities. When the energies necessary to add the first electron (Ed) and the second one (Ed + U) to the quantum dot are not symmetrically placed around the Fermi level, G has a term linear in V if, in addition, either the voltage drop or the coupling to the leads is not symmetric. The effects of temperature are discussed. The results simplify for a symmetric voltage drop, a situation usual in experiment.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Ano de publicação:
2012
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Article