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Selective area atomic layer deposited ZnO nanodot on self-assembled monolayer pattern using a diblock copolymer nano-template.
Kim, Doyoung; Yoon, Jaehong; Kim, Hyungjun.
Afiliação
  • Kim D; School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-784, Korea.
J Nanosci Nanotechnol ; 12(2): 1483-6, 2012 Feb.
Article em En | MEDLINE | ID: mdl-22629984
ZnO nanodots were prepared by selective area atomic layer deposition (SA-ALD) on an octadecyltrichlorosilane (ODTS) self-assembly monolayers (SAMs) patterns formed using a diblock co-polymer (DBC) nanotemplate. In order to transfer well-ordered nanaotemplate in SAMs, SiO2 sacrificial layer was inserted between DBC and SAMs. Cylindrical nanoholes under 16 nm diameters were well-formed on SiO2 layer. SA-ALD of ZnO was successfully performed on by ODTS SAMs.
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2012 Tipo de documento: Article
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2012 Tipo de documento: Article