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Refractive index of silicon at γ ray energies.
Habs, D; Günther, M M; Jentschel, M; Urban, W.
Afiliação
  • Habs D; Ludwig-Maximilians-Universität München, D-85748 Garching, Germany.
Phys Rev Lett ; 108(18): 184802, 2012 May 04.
Article em En | MEDLINE | ID: mdl-22681083
ABSTRACT
For x rays the real part of the refractive index, dominated by Rayleigh scattering, is negative and converges to zero for higher energies. For γ rays a positive component, related to Delbrück scattering, increases with energy and becomes dominating. The deflection of a monochromatic γ beam due to refraction was measured by placing a Si wedge into a flat double crystal spectrometer. Data were obtained in an energy range from 0.18 MeV to 2 MeV. The data are compared to theory, taking into account elastic and inelastic Delbrück scattering as well as recent results on the energy dependence of the pair creation cross section. Probably a new field of γ optics with many new applications opens up.
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2012 Tipo de documento: Article
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2012 Tipo de documento: Article