Characterization of Er in porous Si.
Nanoscale Res Lett
; 7(1): 376, 2012 Jul 09.
Article
em En
| MEDLINE
| ID: mdl-22776613
ABSTRACT
The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale Res Lett
Ano de publicação:
2012
Tipo de documento:
Article