Design and simulation of betavoltaic battery using large-grain polysilicon.
Appl Radiat Isot
; 70(10): 2388-94, 2012 Oct.
Article
em En
| MEDLINE
| ID: mdl-22871443
ABSTRACT
In this paper, we present the design and simulation of a p-n junction betavoltaic battery based on large-grain polysilicon. By the Monte Carlo simulation, the average penetration depth were obtained, according to which the optimal depletion region width was designed. The carriers transport model of large-grain polysilicon is used to determine the diffusion length of minority carrier. By optimizing the doping concentration, the maximum power conversion efficiency can be achieved to be 0.90% with a 10 mCi/cm(2) Ni-63 source radiation.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Appl Radiat Isot
Ano de publicação:
2012
Tipo de documento:
Article