Elemental topological insulator with tunable Fermi level: strained α-Sn on InSb(001).
Phys Rev Lett
; 111(15): 157205, 2013 Oct 11.
Article
em En
| MEDLINE
| ID: mdl-24160626
ABSTRACT
We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.
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01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2013
Tipo de documento:
Article