An epitaxial ferroelectric tunnel junction on silicon.
Adv Mater
; 26(42): 7185-9, 2014 Nov 12.
Article
em En
| MEDLINE
| ID: mdl-25200550
ABSTRACT
Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Óxidos
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Silício
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Titânio
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Compostos de Cálcio
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Compostos de Bário
Idioma:
En
Revista:
Adv Mater
Ano de publicação:
2014
Tipo de documento:
Article