InGaN light-emitting diode stripes with reduced luminous exitance.
Opt Express
; 23(11): 15021-8, 2015 Jun 01.
Article
em En
| MEDLINE
| ID: mdl-26072858
ABSTRACT
InGaN light-emitting diodes of stripe geometries have been demonstrated. The elongated geometry facilitates light spreading in the longitudinal direction. The chips are further shaped by laser-micromachining to have partially-inclined sidewalls. The light extraction efficiencies of such 3D chip geometries are enhanced by ~12% (~8% according to ray-trace simulations), leading to a reduction of junction temperatures. The effective emission area is also increased four times compared to a cubic chip. The stripe LEDs are thus more efficient emitters with reduced luminous exitance, making them more suitable for a wide range of lighting applications.
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MEDLINE
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En
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Opt Express
Ano de publicação:
2015
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Article