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Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition.
Tan, Haijie; Fan, Ye; Rong, Youmin; Porter, Ben; Lau, Chit Siong; Zhou, Yingqiu; He, Zhengyu; Wang, Shanshan; Bhaskaran, Harish; Warner, Jamie H.
Afiliação
  • Tan H; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Fan Y; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Rong Y; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Porter B; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Lau CS; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Zhou Y; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • He Z; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Wang S; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Bhaskaran H; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
  • Warner JH; Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
ACS Appl Mater Interfaces ; 8(3): 1644-52, 2016 Jan 27.
Article em En | MEDLINE | ID: mdl-26756350
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2016 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2016 Tipo de documento: Article