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Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility.
Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Larentis, Stefano; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel.
Afiliação
  • Fallahazad B; Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
  • Movva HC; Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
  • Kim K; Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
  • Larentis S; Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
  • Taniguchi T; National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
  • Watanabe K; National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
  • Banerjee SK; Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
  • Tutuc E; Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
Phys Rev Lett ; 116(8): 086601, 2016 Feb 26.
Article em En | MEDLINE | ID: mdl-26967432

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2016 Tipo de documento: Article