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Intensity Ratio of Resonant Raman Modes for (n,m) Enriched Semiconducting Carbon Nanotubes.
Piao, Yanmei; Simpson, Jeffrey R; Streit, Jason K; Ao, Geyou; Zheng, Ming; Fagan, Jeffrey A; Hight Walker, Angela R.
Afiliação
  • Piao Y; Physical Measurement Laboratory, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
  • Simpson JR; Physical Measurement Laboratory, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
  • Streit JK; Department of Physics, Astronomy and Geosciences, Towson University Towson, Maryland 20899, United States.
  • Ao G; Material Measurement Laboratory, National Institute of Standards and Technology Gaithersburg, Maryland 20899, United States.
  • Zheng M; Material Measurement Laboratory, National Institute of Standards and Technology Gaithersburg, Maryland 20899, United States.
  • Fagan JA; Material Measurement Laboratory, National Institute of Standards and Technology Gaithersburg, Maryland 20899, United States.
  • Hight Walker AR; Material Measurement Laboratory, National Institute of Standards and Technology Gaithersburg, Maryland 20899, United States.
ACS Nano ; 10(5): 5252-9, 2016 05 24.
Article em En | MEDLINE | ID: mdl-27128733
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article