Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films.
Adv Mater
; 28(26): 5284-92, 2016 Jul.
Article
em En
| MEDLINE
| ID: mdl-27159503
ABSTRACT
Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Adv Mater
Ano de publicação:
2016
Tipo de documento:
Article