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Piezo Voltage Controlled Planar Hall Effect Devices.
Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You.
Afiliação
  • Zhang B; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Meng KK; School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100048, China.
  • Yang MY; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Edmonds KW; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
  • Zhang H; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Cai KM; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Sheng Y; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Zhang N; Department of Physics, School of Sciences, University of Science &Technology Beijing, Beijing 100048, China.
  • Ji Y; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Zhao JH; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Zheng HZ; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
  • Wang KY; SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
Sci Rep ; 6: 28458, 2016 06 22.
Article em En | MEDLINE | ID: mdl-27329068
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article