Near infrared organic photodetector utilizing a double electron blocking layer.
Opt Express
; 24(22): 25308-25316, 2016 Oct 31.
Article
em En
| MEDLINE
| ID: mdl-27828469
ABSTRACT
A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene)poly(styrene-sulfonate) (PEDOTPSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 x 104 at -1V, which is one order of magnitude higher than PEDOTPSS single EBL (2.45 x 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 x 1011 Jones, which is 2.83 times higher than the PEDOTPSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Express
Ano de publicação:
2016
Tipo de documento:
Article