Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors.

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng; Kumari, Niru; Davila, Noraica; Strachan, John Paul; Vine, David; Kilcoyne, A L David; Nishi, Yoshio; Williams, R Stanley

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng; Kumari, Niru; Davila, Noraica; Strachan, John Paul; Vine, David; Kilcoyne, A L David; Nishi, Yoshio; Williams, R Stanley.

Afiliação

Kumar S; Hewlett-Packard Laboratories , 1501 Page Mill Road, Palo Alto, California 94304, United States.
Wang Z; Stanford University , Stanford, California 94305, United States.
Huang X; Hewlett-Packard Laboratories , 1501 Page Mill Road, Palo Alto, California 94304, United States.
Kumari N; Hewlett-Packard Laboratories , 1501 Page Mill Road, Palo Alto, California 94304, United States.
Davila N; Hewlett-Packard Laboratories , 1501 Page Mill Road, Palo Alto, California 94304, United States.
Strachan JP; Hewlett-Packard Laboratories , 1501 Page Mill Road, Palo Alto, California 94304, United States.
Vine D; Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Kilcoyne AL; Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Nishi Y; Stanford University , Stanford, California 94305, United States.
Williams RS; Hewlett-Packard Laboratories , 1501 Page Mill Road, Palo Alto, California 94304, United States.

ACS Nano ; 10(12): 11205-11210, 2016 12 27.

Article em En | MEDLINE | ID: mdl-27957851

Palavras-chave

filament; memristors; operating mechanism; oxygen migration; thermophoresis

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article

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