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One Way to Design a Valence-Skip Compound.
Hase, I; Yanagisawa, T; Kawashima, K.
Afiliação
  • Hase I; National Institute of Advanced Industrial Science and Technology (AIST), AIST Central 2, Umezono 1-1-4, Tsukuba, Ibaraki, 305-8568, Japan. i.hase@aist.go.jp.
  • Yanagisawa T; National Institute of Advanced Industrial Science and Technology (AIST), AIST Central 2, Umezono 1-1-4, Tsukuba, Ibaraki, 305-8568, Japan.
  • Kawashima K; IMRA Material R&D Co., Ltd., Kariya, Aichi, 448-0032, Japan.
Nanoscale Res Lett ; 12(1): 127, 2017 Dec.
Article em En | MEDLINE | ID: mdl-28235362
ABSTRACT
Valence-skip compound is a good candidate with high T c and low anisotropy because it has a large attractive interaction at the site of valence-skip atom. However, it is not easy to synthesize such compound because of (i) the instability of the skipping valence state, (ii) the competing charge order, and (iii) that formal valence may not be true in some compounds. In the present study, we show several examples of the valence-skip compounds and discuss how we can design them by first principles calculations. Furthermore, we calculated the electronic structure of a promising candidate of valence skipping compound RbTlCl3 from first principles. We confirmed that the charge-density wave (CDW) is formed in this compound, and the Tl atoms in two crystallographic different sites take the valence Tl1+ and Tl3+. Structure optimization study reveals that this CDW is stable at the ambient pressure, while this CDW gap can be collapsed when we apply pressure with several gigapascals. In this metallic phase, we can expect a large charge fluctuation and a large electron-phonon interaction.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2017 Tipo de documento: Article