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Temperature effects on gallium arsenide 63Ni betavoltaic cell.
Butera, S; Lioliou, G; Barnett, A M.
Afiliação
  • Butera S; Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Brighton BN1 9QT, UK. Electronic address: S.Butera@sussex.ac.uk.
  • Lioliou G; Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Brighton BN1 9QT, UK.
  • Barnett AM; Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Brighton BN1 9QT, UK.
Appl Radiat Isot ; 125: 42-47, 2017 Jul.
Article em En | MEDLINE | ID: mdl-28407497
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Appl Radiat Isot Ano de publicação: 2017 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Appl Radiat Isot Ano de publicação: 2017 Tipo de documento: Article