Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki.

Afiliação

Kanaki T; Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan. kanaki@cryst.t.u-tokyo.ac.jp.
Yamasaki H; Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan.
Koyama T; Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan.
Chiba D; Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan.
Ohya S; Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyoku, Tokyo, 113-8656, Japan. ohya@cryst.t.u-tokyo.ac.jp.
Tanaka M; Center for Spintronics Research Network (CSRN), Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan. ohya@cryst.t.u-tokyo.ac.jp.

Sci Rep ; 8(1): 7195, 2018 May 08.

Article em En | MEDLINE | ID: mdl-29739954

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article