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Nanocrystalline Boron-Doped Diamond as a Corrosion-Resistant Anode for Water Oxidation via Si Photoelectrodes.
Ashcheulov, Petr; Taylor, Andrew; Mortet, Vincent; Poruba, Ales; Le Formal, Florian; Krýsová, Hana; Klementová, Mariana; Hubík, Pavel; Kopecek, Jaromír; Lorincík, Jan; Yum, Jun-Ho; Kratochvílová, Irena; Kavan, Ladislav; Sivula, Kevin.
Afiliação
  • Ashcheulov P; Institute of Physics of the Czech Academy of Sciences , Na Slovance 2 , 182 21 Prague , Czech Republic.
  • Taylor A; Institute of Physics of the Czech Academy of Sciences , Na Slovance 2 , 182 21 Prague , Czech Republic.
  • Mortet V; Institute of Physics of the Czech Academy of Sciences , Na Slovance 2 , 182 21 Prague , Czech Republic.
  • Poruba A; Faculty of Biomedical Engineering , Czech Technical University in Prague , Sítna sq. 3105 , 272 01 Kladno , Czech Republic.
  • Le Formal F; Fill Factory s.r.o. , Televizní 2618 , 756 61 Roznov pod Radhostem , Czech Republic.
  • Krýsová H; Laboratory for Molecular Engineering of Optoelectronic Nanomaterials , Ecole Polytechnique Fédérale de Lausanne (EPFL) , Station 6 , 1015 Lausanne , Switzerland.
  • Klementová M; J. Heyrovsky Institute of Physical Chemistry of the Czech Academy of Sciences , Dolejskova 3 , 182 23 Prague 8 , Czech Republic.
  • Hubík P; Institute of Physics of the Czech Academy of Sciences , Na Slovance 2 , 182 21 Prague , Czech Republic.
  • Kopecek J; New Technologies-Research Centre , University of West Bohemia , 306 14 Pilsen , Czech Republic.
  • Lorincík J; Institute of Physics of the Czech Academy of Sciences , Na Slovance 2 , 182 21 Prague , Czech Republic.
  • Yum JH; Institute of Physics of the Czech Academy of Sciences , Na Slovance 2 , 182 21 Prague , Czech Republic.
  • Kratochvílová I; Research Centre Rez , 250 68 Husinec-Rez , Czech Republic.
  • Kavan L; Laboratory for Molecular Engineering of Optoelectronic Nanomaterials , Ecole Polytechnique Fédérale de Lausanne (EPFL) , Station 6 , 1015 Lausanne , Switzerland.
  • Sivula K; Institute of Physics of the Czech Academy of Sciences , Na Slovance 2 , 182 21 Prague , Czech Republic.
ACS Appl Mater Interfaces ; 10(35): 29552-29564, 2018 Sep 05.
Article em En | MEDLINE | ID: mdl-30084638
Due to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical (PEC) water-splitting systems that convert solar energy into chemical fuels has been greatly limited. Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal toward a suitable protection of otherwise unstable semiconductors used in PEC cells. Here, we report on the development of a protective coating based on thin and electrically conductive nanocrystalline boron-doped diamond (BDD) layers. We found that  BDD layers protect the underlying Si photoelectrodes over a wide pH range (1-14) in aqueous electrolyte solutions. A BDD layer maintains an efficient charge carrier transfer from the underlying silicon to the electrolyte solution. Si|BDD photoelectrodes show no sign of performance degradation after a continuous PEC treatment in neutral, acidic, and basic electrolytes. The deposition of a cobalt phosphate (CoPi) oxygen evolution catalyst onto the BDD layer significantly reduces the overpotential for water oxidation, demonstrating the ability of  BDD layers to substitute the transparent conductive oxide coatings, such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO), frequently used as protective layers in Si photoelectrodes.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2018 Tipo de documento: Article