Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy.

Yang, Inseok; Zhang, Xu; Zheng, Changlin; Gao, Qian; Li, Ziyuan; Li, Li; Lockrey, Mark N; Nguyen, Hieu; Caroff, Philippe; Etheridge, Joanne; Tan, Hark Hoe; Jagadish, Chennupati; Wong-Leung, Jennifer; Fu, Lan

Yang, Inseok; Zhang, Xu; Zheng, Changlin; Gao, Qian; Li, Ziyuan; Li, Li; Lockrey, Mark N; Nguyen, Hieu; Caroff, Philippe; Etheridge, Joanne; Tan, Hark Hoe; Jagadish, Chennupati; Wong-Leung, Jennifer; Fu, Lan.

Afiliação

Zhang X; National Center for International Joint Research of Electronic Materials and Systems, Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering , Zhengzhou University , Zhengzhou 450052 , People's Republic of China.
Zheng C; Monash Centre for Electron Microscopy , Monash University , 10 Innovation Walk , Clayton , Victoria 3800 , Australia.
Etheridge J; Monash Centre for Electron Microscopy , Monash University , 10 Innovation Walk , Clayton , Victoria 3800 , Australia.

ACS Nano ; 12(10): 10374-10382, 2018 Oct 23.

Article em En | MEDLINE | ID: mdl-30281281

Palavras-chave

III−V compound semiconductors; InGaAs/InP quantum wells; MOVPE; growth mechanism; nanowires; selective-area epitaxy

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2018 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2018 Tipo de documento: Article