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Diluted Oxide Interfaces with Tunable Ground States.
Gan, Yulin; Christensen, Dennis Valbjørn; Zhang, Yu; Zhang, Hongrui; Krishnan, Dileep; Zhong, Zhicheng; Niu, Wei; Carrad, Damon James; Norrman, Kion; von Soosten, Merlin; Jespersen, Thomas Sand; Shen, Baogen; Gauquelin, Nicolas; Verbeeck, Johan; Sun, Jirong; Pryds, Nini; Chen, Yunzhong.
Afiliação
  • Gan Y; Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
  • Christensen DV; Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
  • Zhang Y; Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
  • Zhang H; National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Krishnan D; National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Zhong Z; EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium.
  • Niu W; Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
  • Carrad DJ; Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
  • Norrman K; Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark.
  • von Soosten M; Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
  • Jespersen TS; Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
  • Shen B; Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark.
  • Gauquelin N; Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark.
  • Verbeeck J; National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Sun J; EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium.
  • Pryds N; EMAT, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium.
  • Chen Y; National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Adv Mater ; 31(10): e1805970, 2019 Mar.
Article em En | MEDLINE | ID: mdl-30637817
ABSTRACT
The metallic interface between two oxide insulators, such as LaAlO3 /SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1- x Mnx O3 /STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm-2 , where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1- x Mnx O3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm-2 < ns ≤ 1.1 × 1013 cm-2 ) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Ano de publicação: 2019 Tipo de documento: Article