Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening.

Golovynskyi, Sergii; Datsenko, Oleksandr I; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Babichuk, Ivan S; Golovynska, Iuliia; Li, Baikui; Qu, Junle

Golovynskyi, Sergii; Datsenko, Oleksandr I; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Babichuk, Ivan S; Golovynska, Iuliia; Li, Baikui; Qu, Junle.

Afiliação

Golovynskyi S; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, People's Republic of China. Institute of Semiconductor Physics, National Academy of Sciences, 03680, Kyiv, Ukraine.

Nanotechnology ; 30(30): 305701, 2019 Jul 26.

Article em En | MEDLINE | ID: mdl-30974421

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies / Prognostic_studies / Screening_studies Idioma: En Revista: Nanotechnology Ano de publicação: 2019 Tipo de documento: Article

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