Donor Halogenation Effects on Electronic Structures and Electron Process Rates of Donor/C60 Heterojunction Interface: A Theoretical Study on F nZnPc ( n = 0, 4, 8, 16) and Cl nSubPc ( n = 0, 6).

Bai, Rui-Rong; Zhang, Cai-Rong; Wu, You-Zhi; Shen, Yu-Lin; Liu, Zi-Jiang; Chen, Hong-Shan

Donor Halogenation Effects on Electronic Structures and Electron Process Rates of Donor/C₆₀ Heterojunction Interface: A Theoretical Study on F _nZnPc ( n = 0, 4, 8, 16) and Cl _nSubPc ( n = 0, 6).

Bai, Rui-Rong; Zhang, Cai-Rong; Wu, You-Zhi; Shen, Yu-Lin; Liu, Zi-Jiang; Chen, Hong-Shan.

Afiliação

Zhang CR; College of Physics and Electronic Engineering , Northwest Normal University , Lanzhou , Gansu 730070 , China.
Shen YL; Gansu Computing Center , Lanzhou , Gansu 730000 , China.
Liu ZJ; Department of Physics , Lanzhou City University , Lanzhou , Gansu 730070 , China.
Chen HS; College of Physics and Electronic Engineering , Northwest Normal University , Lanzhou , Gansu 730070 , China.

J Phys Chem A ; 123(18): 4034-4047, 2019 May 09.

Article em En | MEDLINE | ID: mdl-30986060

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem A Ano de publicação: 2019 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem A Ano de publicação: 2019 Tipo de documento: Article