High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors.

Majdi, S; Gabrysch, M; Suntornwipat, N; Burmeister, F; Jonsson, R; Kovi, K K; Hallén, A

Majdi, S; Gabrysch, M; Suntornwipat, N; Burmeister, F; Jonsson, R; Kovi, K K; Hallén, A.

Afiliação

Majdi S; Department of Engineering Sciences, Division of Electricity, Uppsala University, Box 534, 751 21 Uppsala, Sweden.
Gabrysch M; Department of Engineering Sciences, Division of Electricity, Uppsala University, Box 534, 751 21 Uppsala, Sweden.
Suntornwipat N; Department of Engineering Sciences, Division of Electricity, Uppsala University, Box 534, 751 21 Uppsala, Sweden.
Burmeister F; Department of Engineering Sciences, Division of Electricity, Uppsala University, Box 534, 751 21 Uppsala, Sweden.
Jonsson R; Department of Engineering Sciences, Division of Electricity, Uppsala University, Box 534, 751 21 Uppsala, Sweden.
Kovi KK; Department of Engineering Sciences, Division of Electricity, Uppsala University, Box 534, 751 21 Uppsala, Sweden.
Hallén A; Royal Institute of Technology, KTH-ICT, Electrum 229, 164 40 Stockholm, Sweden.

Rev Sci Instrum ; 90(6): 063903, 2019 Jun.

Article em En | MEDLINE | ID: mdl-31255019

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Rev Sci Instrum Ano de publicação: 2019 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Rev Sci Instrum Ano de publicação: 2019 Tipo de documento: Article