Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films.
ACS Omega
; 2(12): 8836-8842, 2017 Dec 31.
Article
em En
| MEDLINE
| ID: mdl-31457414
ABSTRACT
Mixed films of a high-permittivity oxide, Er2O3, and a magnetic material, Fe2O3, were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
ACS Omega
Ano de publicação:
2017
Tipo de documento:
Article