A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Materials (Basel)
; 13(3)2020 Feb 07.
Article
em En
| MEDLINE
| ID: mdl-32046197
ABSTRACT
Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Materials (Basel)
Ano de publicação:
2020
Tipo de documento:
Article