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Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods.
Nguyen, Huu Trung; Yamada, Hisashi; Yamada, Toshikazu; Takahashi, Tokio; Shimizu, Mitsuaki.
Afiliação
  • Nguyen HT; GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Industrial Science and Technology (AIST), Nagoya 4648601, Japan.
  • Yamada H; GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Industrial Science and Technology (AIST), Nagoya 4648601, Japan.
  • Yamada T; GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Industrial Science and Technology (AIST), Nagoya 4648601, Japan.
  • Takahashi T; GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Industrial Science and Technology (AIST), Nagoya 4648601, Japan.
  • Shimizu M; GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Industrial Science and Technology (AIST), Nagoya 4648601, Japan.
Materials (Basel) ; 13(4)2020 Feb 18.
Article em En | MEDLINE | ID: mdl-32085428
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2020 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2020 Tipo de documento: Article