Strain Tunable Semimetal-Topological-Insulator Transition in Monolayer 1T
Phys Rev Lett
; 125(4): 046801, 2020 Jul 24.
Article
em En
| MEDLINE
| ID: mdl-32794806
ABSTRACT
A quantum spin hall insulator is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T^{'}-WTe_{2} exhibits this quantized edge conductance in transport measurements, but because of its semimetallic nature, the coherence length is restricted to around 100 nm. To overcome this restriction, we propose a strain engineering technique to tune the electronic structure, where either a compressive strain along the a axis or a tensile strain along the b axis can drive 1T^{'}-WTe_{2} into an full gap insulating phase. A combined study of molecular beam epitaxy and in situ scanning tunneling microscopy or spectroscopy then confirmed such a phase transition. Meanwhile, the topological edge states were found to be very robust in the presence of strain.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2020
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Article