Deep-ultraviolet photodetector based on pulsed-laser-deposited Cs3Cu2I5 films/n-Si heterojunction.
Opt Lett
; 46(17): 4252-4255, 2021 Sep 01.
Article
em En
| MEDLINE
| ID: mdl-34469987
ABSTRACT
All-inorganic lead-free perovskite Cs3Cu2I5 thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on Cs3Cu2I5/n-Si was constructed, and the deep-ultraviolet photoresponse was obtained. A high Ilight/Idark ratio of 130 was achieved at -1.3V, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of 9.44×1011cmâ
Hz1/2â
W-1. Moreover, the device showed good stability after being exposed to air for 30 days.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Opt Lett
Ano de publicação:
2021
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Article