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Electronic-structure evolution of SrFeO3-xduring topotactic phase transformation.
Zhao, Jiali; Chen, Kaihui; Li, Shi-En; Zhang, Qinghua; Wang, Jia-Ou; Guo, Er-Jia; Qian, Haijie; Gu, Lin; Qian, Tian; Ibrahim, Kurash; Fan, Zhen; Guo, Haizhong.
Afiliação
  • Zhao J; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
  • Chen K; Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Li SE; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China.
  • Zhang Q; Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China.
  • Wang JO; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
  • Guo EJ; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Qian H; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
  • Gu L; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Qian T; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China.
  • Ibrahim K; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Fan Z; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
  • Guo H; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China.
J Phys Condens Matter ; 34(6)2021 Nov 22.
Article em En | MEDLINE | ID: mdl-34740209
Oxygen-vacancy-induced topotactic phase transformation between the ABO2.5brownmillerite structure and the ABO3perovskite structure attracts ever-increasing attention due to the perspective applications in catalysis, clean energy field, and memristors. However, a detailed investigation of the electronic-structure evolution during the topotactic phase transformation for understanding the underlying mechanism is highly desired. In this work, multiple analytical methods were used to explore evolution of the electronic structure of SrFeO3-xthin films during the topotactic phase transformation. The results indicate that the increase in oxygen content induces a new unoccupied state of O 2pcharacter near the Fermi energy, inducing the insulator-to-metal transition. More importantly, the hole states are more likely constrained to thedx2-y2orbital than to thed3z2-r2orbital. Our results reveal an unambiguous evolution of the electronic structure of SrFeO3-xfilms during topotactic phase transformation, which is crucial not only for fundamental understanding but also for perspective applications such as solid-state oxide fuel cells, catalysts, and memristor devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Condens Matter Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Condens Matter Ano de publicação: 2021 Tipo de documento: Article