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Simulator acceleration and inverse design of fin field-effect transistors using machine learning.
Kim, Insoo; Park, So Jeong; Jeong, Changwook; Shim, Munbo; Kim, Dae Sin; Kim, Gyu-Tae; Seok, Junhee.
Afiliação
  • Kim I; School of Electrical Engineering, Korea University, Seoul, Korea.
  • Park SJ; School of Electrical Engineering, Korea University, Seoul, Korea.
  • Jeong C; Electronic Components Examination Division, Korean Intellectual Property Office, Daejeon, 35208, Korea.
  • Shim M; Computational Science and Engineering Team, Innovation Center, Samsung Electronics, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, South Korea.
  • Kim DS; Computational Science and Engineering Team, Innovation Center, Samsung Electronics, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, South Korea.
  • Kim GT; Computational Science and Engineering Team, Innovation Center, Samsung Electronics, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, South Korea.
  • Seok J; School of Electrical Engineering, Korea University, Seoul, Korea.
Sci Rep ; 12(1): 1140, 2022 Jan 21.
Article em En | MEDLINE | ID: mdl-35064166
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2022 Tipo de documento: Article