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Switching-behavior improvement in HfO2/ZnO bilayer memory devices by tailoring of interfacial and microstructural characteristics.
Zhang, Wei; Lei, Jianzhang; Dai, Yixian; Zhang, Xuehua; Kang, Limin; Peng, Bowen; Hu, Fangren.
Afiliação
  • Zhang W; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
  • Lei J; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
  • Dai Y; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
  • Zhang X; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
  • Kang L; School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
  • Peng B; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
  • Hu F; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
Nanotechnology ; 33(25)2022 Apr 01.
Article em En | MEDLINE | ID: mdl-35294938
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Nanotechnology Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Nanotechnology Ano de publicação: 2022 Tipo de documento: Article