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Fast Photoresponsive Phototransistor Memory Using Star-Shaped Conjugated Rod-Coil Molecules as a Floating Gate.
Ho, Cheng-Han; Lin, Yan-Cheng; Yang, Wei-Chen; Ercan, Ender; Chiang, Yun-Chi; Lin, Bi-Hsuan; Kuo, Chi-Ching; Chen, Wen-Chang.
Afiliação
  • Ho CH; Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan.
  • Lin YC; Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Yang WC; Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
  • Ercan E; Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Chiang YC; Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Lin BH; Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
  • Kuo CC; Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Chen WC; National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan.
ACS Appl Mater Interfaces ; 14(13): 15468-15477, 2022 Apr 06.
Article em En | MEDLINE | ID: mdl-35318845
ABSTRACT
With the explosive growth in data generation, photomemory capable of multibit data storage is highly desired to enhance the capacity of storage media. To improve the performance of phototransistor memory, an organic-molecule-based electret with an elaborate nanostructure is of great importance because it can enable multibit data storage in a memory device with high stability. In this study, a series of star-shaped rod-coil molecules consisting of perylenediimide (PDI) and biobased solanesol were synthesized in two-armed (PDI-Sol2), four-armed (PDI-Sol4), and six-armed (PDI-Sol6) architectures. Their molecular architecture-morphology relationships were investigated, and phototransistor memory was fabricated and characterized to evaluate the structure-performance relationship of these rod-coil molecules. Accordingly, the memory devices were enabled by photowriting with panchromatic light (405-650 nm) and electrical erasing using a gate bias. The PDI-Sol4-based memory device showed high memory ratios of 10 000 over 10 000 s and a rapid multilevel photoresponse of 50 ms. This achievement is related to the favorable energy-level alignment, isolated nanostructure, and face-on orientation of PDI-Sol4, which eliminated the charge tunneling barrier. The results of this study provide a new strategy for tailoring nanostructures in organic-molecule-based electrets by using a star-shaped rod-coil architecture for high-performance phototransistor memory.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2022 Tipo de documento: Article