Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection.
Adv Sci (Weinh)
; 9(17): e2200844, 2022 Jun.
Article
em En
| MEDLINE
| ID: mdl-35398996
ABSTRACT
Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and NbTiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Adv Sci (Weinh)
Ano de publicação:
2022
Tipo de documento:
Article