Layered post-transition-metal dichalcogenide SnGe<sub>2</sub>N<sub>4</sub> as a promising photoelectric material: a DFT study.

Dat, Vo D; Vu, Tuan V

Layered post-transition-metal dichalcogenide SnGe₂N₄ as a promising photoelectric material: a DFT study.

Dat, Vo D; Vu, Tuan V.

Afiliação

Dat VD; Group of Computational Physics and Simulation of Advanced Materials, Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province Vietnam voduydat@tdmu.edu.vn.
Vu TV; Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam vuvantuan@tdtu.edu.vn.

RSC Adv ; 12(17): 10249-10257, 2022 Mar 31.

Article em En | MEDLINE | ID: mdl-35425004

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: RSC Adv Ano de publicação: 2022 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: RSC Adv Ano de publicação: 2022 Tipo de documento: Article