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Band Offsets of the MOCVD-Grown ß-(Al0.21Ga0.79)2O3/ß-Ga2O3 (010) Heterojunction.
Morgan, Timothy A; Rudie, Justin; Zamani-Alavijeh, Mohammad; Kuchuk, Andrian V; Orishchin, Nazar; Alema, Fikadu; Osinsky, Andrei; Sleezer, Robert; Salamo, Gregory; Ware, Morgan E.
Afiliação
  • Morgan TA; Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States.
  • Rudie J; Naval Surface Warfare Center Crane, 300 HWY 361, Crane, Indiana 47522, United States.
  • Zamani-Alavijeh M; Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States.
  • Kuchuk AV; Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States.
  • Orishchin N; Physics Department, University of Arkansas, 835 W Dickson Street, Fayetteville, Arkansas 72701, United States.
  • Alema F; Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States.
  • Osinsky A; Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, United States.
  • Sleezer R; Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, United States.
  • Salamo G; Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, United States.
  • Ware ME; Twin Cities Engineering, Minnesota State University, Mankato, 9700 France Avenue, Suite P0820, Bloomington, Minnesota 55431, United States.
Article em En | MEDLINE | ID: mdl-35848769

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2022 Tipo de documento: Article