Correlative Nanoscale Imaging of Strained hBN Spin Defects.
ACS Appl Mater Interfaces
; 14(36): 41361-41368, 2022 Sep 14.
Article
em En
| MEDLINE
| ID: mdl-36048915
ABSTRACT
Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Ano de publicação:
2022
Tipo de documento:
Article