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Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors.
Puebla, Sergio; Pucher, Thomas; Rouco, Victor; Sanchez-Santolino, Gabriel; Xie, Yong; Zamora, Victor; Cuellar, Fabian A; Mompean, Federico J; Leon, Carlos; Island, Joshua O; Garcia-Hernandez, Mar; Santamaria, Jacobo; Munuera, Carmen; Castellanos-Gomez, Andres.
Afiliação
  • Puebla S; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.
  • Pucher T; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.
  • Rouco V; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.
  • Sanchez-Santolino G; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.
  • Xie Y; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain.
  • Zamora V; Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040 Madrid, Spain.
  • Cuellar FA; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.
  • Mompean FJ; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
  • Leon C; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.
  • Island JO; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.
  • Garcia-Hernandez M; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.
  • Santamaria J; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain.
  • Munuera C; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.
  • Castellanos-Gomez A; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain.
Nano Lett ; 22(18): 7457-7466, 2022 Sep 28.
Article em En | MEDLINE | ID: mdl-36108061
We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article