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Polymer-like Inorganic Double Helical van der Waals Semiconductor.
Wu, Jiangbin; Wang, Nan; Xie, Ya-Ru; Liu, Hefei; Huang, Xinghao; Cong, Xin; Chen, Hung-Yu; Ma, Jiahui; Liu, Fanxin; Zhao, Hangbo; Zhang, Jun; Tan, Ping-Heng; Wang, Han.
Afiliação
  • Wu J; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California90089, United States.
  • Wang N; Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California90089, United States.
  • Xie YR; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China.
  • Liu H; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California90089, United States.
  • Huang X; Department of Aerospace and Mechanical Engineering, University of Southern California, Los Angeles, California90089, United States.
  • Cong X; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China.
  • Chen HY; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California90089, United States.
  • Ma J; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California90089, United States.
  • Liu F; Collaborative Innovation Center for Information Technology in Biological and Medical Physics, and College of Science, Zhejiang University of Technology, Hangzhou310023, P. R. China.
  • Zhao H; Department of Aerospace and Mechanical Engineering, University of Southern California, Los Angeles, California90089, United States.
  • Zhang J; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China.
  • Tan PH; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China.
  • Wang H; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California90089, United States.
Nano Lett ; 22(22): 9054-9061, 2022 11 23.
Article em En | MEDLINE | ID: mdl-36321634
ABSTRACT
In high-performance flexible and stretchable electronic devices, conventional inorganic semiconductors made of rigid and brittle materials typically need to be configured into geometrically deformable formats and integrated with elastomeric substrates, which leads to challenges in scaling down device dimensions and complexities in device fabrication and integration. Here we report the extraordinary mechanical properties of the newly discovered inorganic double helical semiconductor tin indium phosphate. This spiral-shape double helical crystal shows the lowest Young's modulus (13.6 GPa) among all known stable inorganic materials. The large elastic (>27%) and plastic (>60%) bending strains are also observed and attributed to the easy slippage between neighboring double helices that are coupled through van der Waals interactions, leading to the high flexibility and deformability among known semiconducting materials. The results advance the fundamental understanding of the unique polymer-like mechanical properties and lay the foundation for their potential applications in flexible electronics and nanomechanics disciplines.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Polímeros / Semicondutores Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Polímeros / Semicondutores Idioma: En Revista: Nano Lett Ano de publicação: 2022 Tipo de documento: Article