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Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures.
Xu, Yuan-Dong; Jiang, Yan-Ping; Tang, Xin-Gui; Liu, Qiu-Xiang; Tang, Zhenhua; Li, Wen-Hua; Guo, Xiao-Bin; Zhou, Yi-Chun.
Afiliação
  • Xu YD; Guangzhou Higher Education Mega Centre, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
  • Jiang YP; Guangzhou Higher Education Mega Centre, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
  • Tang XG; Guangzhou Higher Education Mega Centre, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
  • Liu QX; Guangzhou Higher Education Mega Centre, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
  • Tang Z; Guangzhou Higher Education Mega Centre, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
  • Li WH; Guangzhou Higher Education Mega Centre, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
  • Guo XB; Guangzhou Higher Education Mega Centre, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
  • Zhou YC; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China.
Nanomaterials (Basel) ; 13(1)2022 Dec 22.
Article em En | MEDLINE | ID: mdl-36615949

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2022 Tipo de documento: Article