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A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel.
Eshete, Yonas Assefa; Hwang, Eunji; Kim, Junhyung; Nguyen, Phuong Lien; Yu, Woo Jong; Kong, Bai Sun; Jang, Min Seok; Lee, Jaekwang; Cho, Suyeon; Yang, Heejun.
Afiliação
  • Eshete YA; Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Hwang E; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
  • Kim J; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
  • Nguyen PL; Department of Physics, Pusan National University, Busan, 46241, South Korea.
  • Yu WJ; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Kong BS; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
  • Jang MS; School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
  • Lee J; Department of Physics, Pusan National University, Busan, 46241, South Korea.
  • Cho S; Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul, 03760, South Korea.
  • Yang H; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
Adv Mater ; 35(15): e2209089, 2023 Apr.
Article em En | MEDLINE | ID: mdl-36655805
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Ano de publicação: 2023 Tipo de documento: Article