Environmental sensitivity of GaN nanofins grown by selective area molecular beam epitaxy.

Pantle, Florian; Wörle, Simon; Karlinger, Monika; Rauh, Felix; Kraut, Max; Stutzmann, Martin

Pantle, Florian; Wörle, Simon; Karlinger, Monika; Rauh, Felix; Kraut, Max; Stutzmann, Martin.

Afiliação

Pantle F; Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany.
Wörle S; Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany.
Karlinger M; Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany.
Rauh F; Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany.
Kraut M; Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany.
Stutzmann M; Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany.

Nanotechnology ; 34(17)2023 Feb 13.

Article em En | MEDLINE | ID: mdl-36669201

Palavras-chave

GaN nanofins; contact potential difference; environmental sensitivity; molecular beam epitaxy; non-polar side facets; sensors; surface band bending

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article

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