Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.

Chen, Kun-Ming; Lin, Chuang-Ju; Chuang, Chia-Wei; Pai, Hsuan-Cheng; Chang, Edward-Yi; Huang, Guo-Wei

Chen, Kun-Ming; Lin, Chuang-Ju; Chuang, Chia-Wei; Pai, Hsuan-Cheng; Chang, Edward-Yi; Huang, Guo-Wei.

Afiliação

Chen KM; Taiwan Semiconductor Research Institute, Hsinchu 300091, Taiwan.
Lin CJ; Taiwan Semiconductor Research Institute, Hsinchu 300091, Taiwan.
Chuang CW; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Pai HC; Taiwan Semiconductor Research Institute, Hsinchu 300091, Taiwan.
Chang EY; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Huang GW; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.

Micromachines (Basel) ; 14(5)2023 May 08.

Article em En | MEDLINE | ID: mdl-37241634

Palavras-chave

GaN; HEMT; UV illumination; X-parameter; large-signal characterization; trapping effect

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article

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